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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CHM2342PT CURRENT 4.2 Ampere FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. 1.7~2.1 (2) (3) SC-59/SOT-346 0.95 2.7~3.1 0.95 (1) CONSTRUCTION * N-Channel Enhancement 0.3~0.51 1.2~1.9 0.89~1.3 0.085~0.2 0.3~0.6 2.1~2.95 (1) G CIRCUIT D (3) 0~0.1 S (2) Dimensions in millimeters SC-59/SOT-346 Absolute Maximum Ratings Symbol Parameter TA = 25C unless otherwise noted CHM2342PT Units VDSS VGSS Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous 40 V V 20 4.2 ID - Pulsed PD TJ TSTG Maximum Power Dissipation Operating Temperature Range Storage Temperature Range (Note 3) A 15 1250 -55 to 150 -55 to 150 mW C C Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1) 100 C/W 2008-05 RATING CHARACTERISTIC CURVES ( CHM2342PT ) Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS I GSSF I GSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = 250 A VDS = 40 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V 40 1 +100 -100 V A nA nA ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A VGS=10V, ID=4.2A 1.0 37 44 3.0 45 V RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=3.3A 58 m Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 15V, VGS = 0V, f = 1.0 MHz 680 110 65 pF SWITCHING CHARACTERISTICS (Note 4) Qg Qgs Q gd ton tr toff tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time VDS=20V, ID=4.2A VGS=10V V DD= 20V ID = 4.2A , VGS = 10 V RGEN= 3 13.5 1.7 2.8 11 3 26 3 18 nC 25 10 55 10 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Drain-Source Diode Forward Current (Note 1) 4.2 1.2 A V Drain-Source Diode Forward Voltage IS = 1.25A , VGS = 0 V (Note 2) |
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